Gallium nitride solar isotope composite micro battery and manufacture method thereof
The invention relates to a gallium nitride solar isotope composite micro battery and a manufacture method thereof, belonging to the energy source field in micro electromechanical systems. The gallium nitride solar isotope composite micro battery sequentially comprises an optical anti-reflective film...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a gallium nitride solar isotope composite micro battery and a manufacture method thereof, belonging to the energy source field in micro electromechanical systems. The gallium nitride solar isotope composite micro battery sequentially comprises an optical anti-reflective film, a sapphire substrate, a P type GaN epitaxially grown layer, an N type GaN epitaxially grown layer, a P type GaN epitaxially grown layer and an isotope radiation layer. The manufacture method of the gallium nitride solar isotope composite micro battery comprises the steps of plating the optical anti-reflective film at one side of a substrate, sequentially raising two back-to-back PN knots at the other side of the substrate by utilizing the metal organism chemical meteorology deposition process and at last fixing the isotope radiation layer at the outer side of the PN knots. The invention overcomes the defects that a solar battery can provide electric energy only under illumination, and an isotope battery has small |
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