Capacitor structure for voltage booster circuit and method for forming same
The invention discloses a capacitor structure for a voltage booster circuit and a method for forming the same. The capacitor structure comprises a substrate material, a U-shaped lower electrode positioned in the substrate material, a T-shaped upper electrode embedded with the U-shaped lower electrod...
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| Hauptverfasser: | , , , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a capacitor structure for a voltage booster circuit and a method for forming the same. The capacitor structure comprises a substrate material, a U-shaped lower electrode positioned in the substrate material, a T-shaped upper electrode embedded with the U-shaped lower electrode, and a dielectric layer arranged between the U-shaped lower electrode and the T-shaped upper electrode. The method adopts a three-dimensional technical means to increase the contact area of the upper and lower electrodes to increase the capacitance of the voltage booster circuit dramatically. |
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