Low temperature polysilicon thin-film device and method of manufacturing the same

The invention relates to a low temperature polysilicon thin film device and a manufacturing method and equipment thereof, and the manufacturing method comprises the following steps: a substrate is provided; bias pressure is added to the substrate and a polysilicon material is deposited on the substr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HUANG ZHIREN, WANG LIANGTANG, ZHANG RONGFANG, PENG YIXUAN, WENG DEQI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a low temperature polysilicon thin film device and a manufacturing method and equipment thereof, and the manufacturing method comprises the following steps: a substrate is provided; bias pressure is added to the substrate and a polysilicon material is deposited on the substrate by a plasma chemical vapor deposition method, so the polysilicon material is crystallized into the polysilicon thin film through the induce of the bias pressure. A polysilicon thin film device of higher quality can be obtained at low temperature, the crystallization ratio is high and the thickness of nuclear pregnant layer is reduced, and the pollution of the vacuum is avoided.