Manufacturing process for Au/Cr-CZT combination electrode

The invention relates to a process for preparing an Au/Cr-CZT combined electrode, which belongs to the technical field of preparing CdZnTe (CZT) semiconductor material detector ohmic electrodes. The process of the invention utilizes the existing traditional common vacuum evaporator to first vaporize and deposit a Cr layer with the thickness of 3-15nm on a CZT surface, and vaporize and deposit an Au electrode layer with the thickness of 50-150nm again, and then the Au electrode layer is kept 10-60 minutes under the constant temperature ranging from 100 DEG C to 200 DEG C to advance the alloying process of the electrode layer, the vacuum degree of vacuum evaporation is 10-10Pa, after a wafer is naturally cooled for 0.5-2 hours, the Au/Cr-CZT combined contact electrode can be prepared finally. Compared with the existing electrode, the Au/Cr-CZT combined electrode obtained by the process of the invention is stronger in contact adhesive power, an I-V characteristic curve displays the ohmic linearity of the