Sputtering apparatus and sputtering method

The present invention provideS a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic fiel...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YAMANISHI HITOSHI, YAMAMOTO MASAHIRO, MURAGISHI ISAO, KOIWASAKI TAKESHI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present invention provideS a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuit (10) of a magnetron electrode is set as ''magnetic circuit (10) in which center perpendicular magnet (101), inside parallel magnet (103), outside parallel magnet (104), and perimeter perpendicular magnet (102) are arranged'' from the central part of target (2) toward the perimeter part, and inside parallel magnet (103) is brought close to target (2).