Method for preparing ZrO2 compound film on surface of monocrystalline silicon wafer

The invention provides a method for preparing ZrO2 composite film on the surface of a monocrystalline silicon slice, which comprises the following steps: soaking the monocrystalline silicon slice in aqua fortis to be heated for 5 to 6 hours; taking out the monocrystalline silicon slice, cleaning the monocrystalline silicon slice by using deionized water, and drying the monocrystalline silicon slice; immersing the monocrystalline silicon slice in solution of which the volume ratio of H2SO4 to H2O2 is 70 to 30 to be treated for 1 hour at room temperature; immersing the monocrystalline silicon slice in the prepared mercaptosilane solution after cleaning and drying, and taking out the monocrystalline silicon slice after the mixture is kept standing for 6 to 8 hours; blowing the monocrystalline silicon slice by using nitrogen after cleaning; and placing the monocrystalline silicon slice in salpeter solution with mass concentration of between 30 and 60 percent to react for 2 hours at a temperature of between 50 and