Capacitor tantalum wire and preparation method thereof
The invention discloses a capacitor grade tantalum wire and particularly discloses the capacitor grade tantalum wire and a preparation method thereof. The capacitor grade tantalum wire is characterized in that the capacitor grade tantalum wire is mainly prepared by tantalum powder and the following...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a capacitor grade tantalum wire and particularly discloses the capacitor grade tantalum wire and a preparation method thereof. The capacitor grade tantalum wire is characterized in that the capacitor grade tantalum wire is mainly prepared by tantalum powder and the following raw materials by mass: 10 to 1,000ppm of silicon and 10 to 1,000ppm of yttrium oxide are added in the tantalum powder. The preparation method of the capacitor grade tantalum wire comprises: 10 to 1,000ppm of silicon powder and 10 to 1,000ppm yttrium oxide powder are firstly added in the tantalum powder for mixing; the tantalum powder after the mixing is made into a bar billet by cold isostatic pressing, the bar billet which is taken as a sintering resistance is sintered to 2,200 to 2,400 degrees in a vacuum furnace; then the annealing is carried out for 2 hours at 1,300 degrees; the tantalum bar forms the tantalum wire by the repeated drawing of a mold and the repeated annealing at 1,300 degrees. The produced tanta |
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