Silicon nitride gap filling layer and method for forming same

The invention relates to a method for forming a packing layer in the clearance of silicon nitride, and the method comprises the following steps: firstly, a former multistage forming process is carried out to form a stacking film layer on a substrate, thus forming a dense film, and then, a later sing...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN NENGGUO, HUANG JIANZHONG, XIE CHAOJING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a method for forming a packing layer in the clearance of silicon nitride, and the method comprises the following steps: firstly, a former multistage forming process is carried out to form a stacking film layer on a substrate, thus forming a dense film, and then, a later single stage deposition process is carried out to form a top layer on the stacking film layer, thus forming a loose film, wherein, the thickness of the top layer accounts for more than 10 percent of the total thickness of the packing layer in the clearance of silicon nitride.