Silicon nitride gap filling layer and method for forming same
The invention relates to a method for forming a packing layer in the clearance of silicon nitride, and the method comprises the following steps: firstly, a former multistage forming process is carried out to form a stacking film layer on a substrate, thus forming a dense film, and then, a later sing...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a method for forming a packing layer in the clearance of silicon nitride, and the method comprises the following steps: firstly, a former multistage forming process is carried out to form a stacking film layer on a substrate, thus forming a dense film, and then, a later single stage deposition process is carried out to form a top layer on the stacking film layer, thus forming a loose film, wherein, the thickness of the top layer accounts for more than 10 percent of the total thickness of the packing layer in the clearance of silicon nitride. |
---|