Semiconductor light emitting element and method for fabricating the same

The invention relates to a semiconductor luminous element and a manufacturing method thereof. The semiconductor luminous element comprises a substrate, a p-type semiconductor layer formed on the substrate, a luminous layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the luminous layer; micron and nanometer columns which are numerously vertical to the substrate direction and have a depth of not less than 0.2 micron are formed on the surface of the n-type semiconductor layer. The nanometer columns are deepened to change the luminous field pattern of the semiconductor luminous element and improve the positive light emitting strength and the light emitting efficiency. The manufacturing method of the semiconductor luminous element comprises: forming the n-type semiconductor layer, the luminous layer and the p-type semiconductor layer on the first substrate through epitaxial wafers; providing a conductive substrate, reversing the epitaxial structure on the first substrate t