Test construction and test method

The invention discloses a test structure and a test method for a wafer layer, wherein, a heating layer arranged in a wafer is used for directly heating a structure to be tested which is disposed above or beside the heating layer; and after being electrified, the heating layer generates heat. Therefo...

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Hauptverfasser: SU GUANCHENG, KE WENXIONG, ZHANG WENJUN
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creator SU GUANCHENG
KE WENXIONG
ZHANG WENJUN
description The invention discloses a test structure and a test method for a wafer layer, wherein, a heating layer arranged in a wafer is used for directly heating a structure to be tested which is disposed above or beside the heating layer; and after being electrified, the heating layer generates heat. Therefore, the heating of the heating layer and the electric input of the structure to be tested are controlled separately without mutual influence.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101364573A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101364573A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101364573A3</originalsourceid><addsrcrecordid>eNrjZFAMSS0uUUjOzysuKSpNLsnMz1NIzEtRKAGJ5qaWZOSn8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwNDYzMTU3NjR2Ni1AAAkmMlww</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Test construction and test method</title><source>esp@cenet</source><creator>SU GUANCHENG ; KE WENXIONG ; ZHANG WENJUN</creator><creatorcontrib>SU GUANCHENG ; KE WENXIONG ; ZHANG WENJUN</creatorcontrib><description>The invention discloses a test structure and a test method for a wafer layer, wherein, a heating layer arranged in a wafer is used for directly heating a structure to be tested which is disposed above or beside the heating layer; and after being electrified, the heating layer generates heat. Therefore, the heating of the heating layer and the electric input of the structure to be tested are controlled separately without mutual influence.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090211&amp;DB=EPODOC&amp;CC=CN&amp;NR=101364573A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090211&amp;DB=EPODOC&amp;CC=CN&amp;NR=101364573A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SU GUANCHENG</creatorcontrib><creatorcontrib>KE WENXIONG</creatorcontrib><creatorcontrib>ZHANG WENJUN</creatorcontrib><title>Test construction and test method</title><description>The invention discloses a test structure and a test method for a wafer layer, wherein, a heating layer arranged in a wafer is used for directly heating a structure to be tested which is disposed above or beside the heating layer; and after being electrified, the heating layer generates heat. Therefore, the heating of the heating layer and the electric input of the structure to be tested are controlled separately without mutual influence.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAMSS0uUUjOzysuKSpNLsnMz1NIzEtRKAGJ5qaWZOSn8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_QwNDYzMTU3NjR2Ni1AAAkmMlww</recordid><startdate>20090211</startdate><enddate>20090211</enddate><creator>SU GUANCHENG</creator><creator>KE WENXIONG</creator><creator>ZHANG WENJUN</creator><scope>EVB</scope></search><sort><creationdate>20090211</creationdate><title>Test construction and test method</title><author>SU GUANCHENG ; KE WENXIONG ; ZHANG WENJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101364573A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SU GUANCHENG</creatorcontrib><creatorcontrib>KE WENXIONG</creatorcontrib><creatorcontrib>ZHANG WENJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SU GUANCHENG</au><au>KE WENXIONG</au><au>ZHANG WENJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Test construction and test method</title><date>2009-02-11</date><risdate>2009</risdate><abstract>The invention discloses a test structure and a test method for a wafer layer, wherein, a heating layer arranged in a wafer is used for directly heating a structure to be tested which is disposed above or beside the heating layer; and after being electrified, the heating layer generates heat. Therefore, the heating of the heating layer and the electric input of the structure to be tested are controlled separately without mutual influence.</abstract><oa>free_for_read</oa></addata></record>
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language chi ; eng
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Test construction and test method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T02%3A28%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SU%20GUANCHENG&rft.date=2009-02-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN101364573A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true