Production method of light sensitive diode
The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conduct...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LI SHIWEI HONG WEIQIN GUO JIANNAN LAN BANGQIANG LIN HENGQING SU ZONGYI SU ZHAOAN |
| description | The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conducting layer and meanwhile in-situ dopes the conducting layer to form a second doping region on the surface thereof. The manufacturing method of the photosensitive diode of the invention is mostly characterized in avoiding that the lattice structure of the surface is injected by high dose doping agent to be destroyed in the craftwork, thereby effectively reducing a dark current value generated in the non-light state and improving the sensitivity of the photosensitive diode. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101320764A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101320764A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101320764A3</originalsourceid><addsrcrecordid>eNrjZNAKKMpPKU0uyczPU8hNLcnIT1HIT1PIyUzPKFEoTs0rzizJLEtVSMnMT0nlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBobGRgbmZiaOxsSoAQA-WikV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Production method of light sensitive diode</title><source>esp@cenet</source><creator>LI SHIWEI ; HONG WEIQIN ; GUO JIANNAN ; LAN BANGQIANG ; LIN HENGQING ; SU ZONGYI ; SU ZHAOAN</creator><creatorcontrib>LI SHIWEI ; HONG WEIQIN ; GUO JIANNAN ; LAN BANGQIANG ; LIN HENGQING ; SU ZONGYI ; SU ZHAOAN</creatorcontrib><description>The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conducting layer and meanwhile in-situ dopes the conducting layer to form a second doping region on the surface thereof. The manufacturing method of the photosensitive diode of the invention is mostly characterized in avoiding that the lattice structure of the surface is injected by high dose doping agent to be destroyed in the craftwork, thereby effectively reducing a dark current value generated in the non-light state and improving the sensitivity of the photosensitive diode.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081210&DB=EPODOC&CC=CN&NR=101320764A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081210&DB=EPODOC&CC=CN&NR=101320764A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI SHIWEI</creatorcontrib><creatorcontrib>HONG WEIQIN</creatorcontrib><creatorcontrib>GUO JIANNAN</creatorcontrib><creatorcontrib>LAN BANGQIANG</creatorcontrib><creatorcontrib>LIN HENGQING</creatorcontrib><creatorcontrib>SU ZONGYI</creatorcontrib><creatorcontrib>SU ZHAOAN</creatorcontrib><title>Production method of light sensitive diode</title><description>The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conducting layer and meanwhile in-situ dopes the conducting layer to form a second doping region on the surface thereof. The manufacturing method of the photosensitive diode of the invention is mostly characterized in avoiding that the lattice structure of the surface is injected by high dose doping agent to be destroyed in the craftwork, thereby effectively reducing a dark current value generated in the non-light state and improving the sensitivity of the photosensitive diode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAKKMpPKU0uyczPU8hNLcnIT1HIT1PIyUzPKFEoTs0rzizJLEtVSMnMT0nlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBobGRgbmZiaOxsSoAQA-WikV</recordid><startdate>20081210</startdate><enddate>20081210</enddate><creator>LI SHIWEI</creator><creator>HONG WEIQIN</creator><creator>GUO JIANNAN</creator><creator>LAN BANGQIANG</creator><creator>LIN HENGQING</creator><creator>SU ZONGYI</creator><creator>SU ZHAOAN</creator><scope>EVB</scope></search><sort><creationdate>20081210</creationdate><title>Production method of light sensitive diode</title><author>LI SHIWEI ; HONG WEIQIN ; GUO JIANNAN ; LAN BANGQIANG ; LIN HENGQING ; SU ZONGYI ; SU ZHAOAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101320764A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>LI SHIWEI</creatorcontrib><creatorcontrib>HONG WEIQIN</creatorcontrib><creatorcontrib>GUO JIANNAN</creatorcontrib><creatorcontrib>LAN BANGQIANG</creatorcontrib><creatorcontrib>LIN HENGQING</creatorcontrib><creatorcontrib>SU ZONGYI</creatorcontrib><creatorcontrib>SU ZHAOAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI SHIWEI</au><au>HONG WEIQIN</au><au>GUO JIANNAN</au><au>LAN BANGQIANG</au><au>LIN HENGQING</au><au>SU ZONGYI</au><au>SU ZHAOAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Production method of light sensitive diode</title><date>2008-12-10</date><risdate>2008</risdate><abstract>The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conducting layer and meanwhile in-situ dopes the conducting layer to form a second doping region on the surface thereof. The manufacturing method of the photosensitive diode of the invention is mostly characterized in avoiding that the lattice structure of the surface is injected by high dose doping agent to be destroyed in the craftwork, thereby effectively reducing a dark current value generated in the non-light state and improving the sensitivity of the photosensitive diode.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN101320764A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | Production method of light sensitive diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T16%3A58%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20SHIWEI&rft.date=2008-12-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN101320764A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |