Production method of light sensitive diode

The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conduct...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	LI SHIWEI, HONG WEIQIN, GUO JIANNAN, LAN BANGQIANG, LIN HENGQING, SU ZONGYI, SU ZHAOAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	The invention discloses a manufacturing method of a photosensitive diode, comprising: firstly providing a substrate comprising a doping well; then forming a first doping region in the doping well; and then making use of an epitaxial process on the surface of the first doping region to form a conducting layer and meanwhile in-situ dopes the conducting layer to form a second doping region on the surface thereof. The manufacturing method of the photosensitive diode of the invention is mostly characterized in avoiding that the lattice structure of the surface is injected by high dose doping agent to be destroyed in the craftwork, thereby effectively reducing a dark current value generated in the non-light state and improving the sensitivity of the photosensitive diode.