Semiconductor device of sensing type and its manufacture

A sensing semiconductor device and the fabrication method thereof are disclosed. A plurality of metal lines are developed on a light-transmitting carrier plate; a plurality of sensing chips which are processed with thickness reduction and chip probing in advance and are provided with conductive lug bosses on the solder pads are electrically connected to the metal lines on the light-transmitting carrier plate; a first dielectric layer is filled among the sensing chips to cover the metal lines and the areas around the sensing chips; a second dielectric layer and a groove exposed outside the metal lines are developed on the sensing chips and on the first dielectric layer; a plurality of leads electrically connected to the metal wires are arranged on the second dielectric layer; incision is carried out among the sensing chips so as to form a plurality of sensing semiconductor devices. In this way, problems of line rapture due to that the included angle at the joint of the lines is acute, poor electric connection