Realizing method of novel enhancement type AlGaN/GaN HEMT device
The invention discloses a realization method for a novel enhancement type AlGaN/GaN HEMT device, relating to the microelectronic technical field. The realization method has low cost, simple technique,good repeatability, high reliability and small damage on materials. The enhancement type HEMT device...
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| creator | DONG ZUODIAN ZHANG JINCHENG LU LING HAO YUE ZHENG PENGTIAN WANG CHONG QIN XUEXUE ZHANG JINFENG |
| description | The invention discloses a realization method for a novel enhancement type AlGaN/GaN HEMT device, relating to the microelectronic technical field. The realization method has low cost, simple technique,good repeatability, high reliability and small damage on materials. The enhancement type HEMT device with high threshold voltage and nano-sized effective channel length can be obtained. The inventionadopts the method of etching a table top after growth of an AlN nucleating layer and a GaN epitaxial layer and before growth of a secondary GaN epitaxial layer and an AlGaN layer to make heterojunctionmaterials on the side face of the table top grow along the nonpolarized direction, thereby the air density of two-dimensional electrons in the heterojunction materials on the side face of the tableto p is greatly reduced. A grid electrode of the device is produced on the side face of the table top; under the condition of no additional voltage on the grid electrode, a conductive channel can notbe switched on or weakly swi |
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The realization method has low cost, simple technique,good repeatability, high reliability and small damage on materials. The enhancement type HEMT device with high threshold voltage and nano-sized effective channel length can be obtained. The inventionadopts the method of etching a table top after growth of an AlN nucleating layer and a GaN epitaxial layer and before growth of a secondary GaN epitaxial layer and an AlGaN layer to make heterojunctionmaterials on the side face of the table top grow along the nonpolarized direction, thereby the air density of two-dimensional electrons in the heterojunction materials on the side face of the tableto p is greatly reduced. 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The realization method has low cost, simple technique,good repeatability, high reliability and small damage on materials. The enhancement type HEMT device with high threshold voltage and nano-sized effective channel length can be obtained. The inventionadopts the method of etching a table top after growth of an AlN nucleating layer and a GaN epitaxial layer and before growth of a secondary GaN epitaxial layer and an AlGaN layer to make heterojunctionmaterials on the side face of the table top grow along the nonpolarized direction, thereby the air density of two-dimensional electrons in the heterojunction materials on the side face of the tableto p is greatly reduced. A grid electrode of the device is produced on the side face of the table top; under the condition of no additional voltage on the grid electrode, a conductive channel can notbe switched on or weakly swi</abstract><oa>free_for_read</oa></addata></record> |
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| title | Realizing method of novel enhancement type AlGaN/GaN HEMT device |
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