Method for inhibition of ZnO crystal ¿Cc axis direction growth under hydrothermal condition

The invention discloses a method for growing ZnO crystal on -c axis direction under the inhibition hydrothermal condition, which carries out the following steps before growing the ZnO crystal by utilizing the hydrothermal method: firstly, taking the ZnO crystal and cutting into ZnO wafer, secondly, fixedly connecting the -c surface of the cut ZnO wafer with a barrier tablet which is made of materials with high-temperature and corrosion resistant, then obtaining ZnO seed wafer, and the obtained ZnO seed wafer can be used for growing the ZnO crystal by utilizing the hydrothermal method, and area of the barrier tablet should be larger than that of the -c surface of the obtained ZnO crystal finished product which is grown by utilizing the hydrothermal method. The growth of the ZnO crystal on -c axis direction can be inhibited well by adopting the method of the invention, and the growing direction of the ZnO crystal is along the -c axis, thereby, the goal of reducing the foreign matter content and defects of the h