Method of ultra-flation chemical-mechanical polishing technique and semiconductor component manufactured by using the method

The invention provides a super flat chemical mechanical polishing (SF-CMP) technique, which is mainly a method for replacing laser lift-off during semiconductor manufacture process, the SF-CMP mainly adopts the step that: first a plurality of polishing stop points are embedded onto the polishing sur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	CAI YONG, CHU HONGSHEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention provides a super flat chemical mechanical polishing (SF-CMP) technique, which is mainly a method for replacing laser lift-off during semiconductor manufacture process, the SF-CMP mainly adopts the step that: first a plurality of polishing stop points are embedded onto the polishing surface to be desired, and then polishing is performed. The invention is characterized in that: the hardness of the material of the polishing stop points is larger than that of the surface material. By the method super flat polishing surface can be obtained in the case of no removing polishing stop points.