Method for making strain silicon channel metal semiconductor transistor
The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; at least a gate structure is formed on the supporting base; a mask layer is formed on the gate s...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention provides a method for manufacturing transistor elements of a strained silicon positive channel metal oxide semiconductor, which comprises the following steps: a supporting base is provided; at least a gate structure is formed on the supporting base; a mask layer is formed on the gate structure; an etching process is adopted to form two grooves in the supporting base on two opposite sides of the gate structure; a selective epitaxy growth process is used for forming epitaxial layers in the grooves, respectively. |
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