Integrated opto-electronic device for generating high-frequency microwave by light heterodyne method
The invention belongs to the photoelectronic device preparation technical range in the microwave photonics field, in particular relates to an integrated photoelectronic device which utilizes an optical heterodyne method to generate high-frequency microwaves. A main laser and a slave laser of the int...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention belongs to the photoelectronic device preparation technical range in the microwave photonics field, in particular relates to an integrated photoelectronic device which utilizes an optical heterodyne method to generate high-frequency microwaves. A main laser and a slave laser of the integrated photoelectronic device are parallelly arranged on a substrate on which a lower optical guiding layer, an MQW active layer, a grating layer, an upper optical guiding layer, an upper cladding and an ohmic contact layer are orderly extended outwards and integrated together; one end of the main laser and one end of the slave laser realize coupling of modulation sidebands through a multimode interferometer or an annulet structure, and injection locking is performed; then coupling out is performed by the multimode interferometer, heterodyne is performed, the high-frequency microwaves can be obtained. Therefore, differences of laser radiated wavelengths are realized by means of controlling working temperature and |
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