Capacitance type sensing structure

Capacitance type sensing structure

The invention discloses a capacitance sensing structure, including a parent metal, a sensing electrode layer and at least one pile layer and a conductive body. The sensing electrode layer is formed onor in the parent metal. The pile layer is formed on the sensing electrode layer. The conductive body...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YUAN ZONGTING, CHEN HUANGKUN, LI ZHENGZHANG, WANG CHAOQING, WANG HONGZHOU, XING TAIGANG, XIE XIESHEN, LIANG CHAORUI
Format: Patent
Sprache:chi ; eng
Schlagworte:
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Beschreibung
Zusammenfassung:The invention discloses a capacitance sensing structure, including a parent metal, a sensing electrode layer and at least one pile layer and a conductive body. The sensing electrode layer is formed onor in the parent metal. The pile layer is formed on the sensing electrode layer. The conductive body is correspondingly arranged on the sensing electrode layer and the pile layer.