Combined different valence ions doped crystal of lead tungstate with high light yield, and prepartion method

The present invention relates to a method for preparing heterovalent ions-doped high-luminescence-yield lead tungstate crystal and a preparation method thereof. The high-luminescence-yield lead tungstate crystal is doped with F 100-8000 ppm, Sb 100-5000 ppm, and Mo, V, Nb, Zr, and Ti 0-10000 ppm, an...

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Bibliographische Detailangaben

Hauptverfasser:	XIE JIANJUN, XIONG WEI, LIAO JINGYING, SHAO PEIFA, YE CHONGZHI, YUAN HUI, TONG NAIZHU, WU HONGSHU, ZHAN ZONGGUI, SHEN BINGFU, YAN DONGSHENG, CHEN LIANG, LI PEIJUN, ZHU XIANGYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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