Combined different valence ions doped crystal of lead tungstate with high light yield, and prepartion method

The present invention relates to a method for preparing heterovalent ions-doped high-luminescence-yield lead tungstate crystal and a preparation method thereof. The high-luminescence-yield lead tungstate crystal is doped with F 100-8000 ppm, Sb 100-5000 ppm, and Mo, V, Nb, Zr, and Ti 0-10000 ppm, an...

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Hauptverfasser:	XIE JIANJUN, XIONG WEI, LIAO JINGYING, SHAO PEIFA, YE CHONGZHI, YUAN HUI, TONG NAIZHU, WU HONGSHU, ZHAN ZONGGUI, SHEN BINGFU, YAN DONGSHENG, CHEN LIANG, LI PEIJUN, ZHU XIANGYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a method for preparing heterovalent ions-doped high-luminescence-yield lead tungstate crystal and a preparation method thereof. The high-luminescence-yield lead tungstate crystal is doped with F 100-8000 ppm, Sb 100-5000 ppm, and Mo, V, Nb, Zr, and Ti 0-10000 ppm, and is prepared via modified Bridgman method by using platinum crucible. The method can be used for preparing several strands of lead tungstate crystals in one process, and is suitable for mass production. The obtained heterovalent ions-doped high-luminescence-yield lead tungstate crystal has such advantages as rapid attenuation and high luminescence yield.