Electrochemical device
An electrochemical device comprising: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 [mu]m; (b) a TiO2 layer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount wher...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An electrochemical device comprising: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 [mu]m; (b) a TiO2 layer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount where the layer is MtiO3, and where the layer has a thickness from 5 nm to 1 mm; (c) a grid of inert metal on the TiO2 layer, arranged so as to be able to apply a electric field across the TiO2 layer; and (d) an ohmic contact on the semiconductor layer. |
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