Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector

A type of damp corrupting method of gallium arsenide/aluminium arsenide distributing Prague reflector that characterized in that it includes following steps: (A) on the underlay, the gallium arsenide cushion layer is generated extendedly by method of molecule beam extension; (B) generating several period distribution Prague reflector on the gallium arsenide cushion layer; (C) photoetching the distribution Prague reflector to form photosensitive resist pattern, light possesses width of photosensitive resist in the photosensitive resist pattern; (D) eating off the part of the distribution Prague reflector by cauterization solution; (E) cauterization solution and selective cauterization solution are alternatively used to etch the distribution Prague reflector, so the required cauterization depth can be achieved precisely.