Semiconductor device and its manufacture method

Semiconductor device and its manufacture method

The preparation method for semi-conductor device comprises: providing a substrate formed a first-type MOS transistor, an I/O second-type MOS transistor, and a core MOS transistor; forming a first stress layer to cover former elements; then, removing at least the stress layer on the second-type trans...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KUNXIAN,HUANG LI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The preparation method for semi-conductor device comprises: providing a substrate formed a first-type MOS transistor, an I/O second-type MOS transistor, and a core MOS transistor; forming a first stress layer to cover former elements; then, removing at least the stress layer on the second-type transistor to hold the stress layer on the first-type transistor; finally, forming the second stress layer on the second-type MOS transistor.