Semiconductor device and its forming method

The present invention relates to a semiconductor device comprising at least one static random access memory (SRAM) cell with self-aligned contacts. Specifically, the at least one SRAM cell comprises at least a first gate conductor that is located over a channel region between a source region and a drain region. The first gate conductor is covered by a dielectric cap comprising a protective dielectric material, and the source and drain regions are covered by non-protective dielectric material(s) that can be selectively removed against the protective material. In this manner, a self-aligned source or drain contact can be formed through the non-protective dielectric material(s) to contact either the source or the drain region, while the dielectric cap protects the first gate conductor during formation of the source or drain contact opening and thereby prevents shorting between the first gate conductor and the source or drain contact to be formed.