Method for local bonding silicon / glass by laser

This invention discloses a method for laser local bonding of silicon/glass. The method comprises: washing, performing a first activation, performing a second activation, pre-bonding, and laser heating. After surface activation treatment, glass and silicon wafer can be intimately bonded by laser local bonding without the need for outside force. The method realizes laser local bonding through local high temperature in a certain region, and has a high bonding strength. As a whole, the silicon wafer has a low temperature, and does not have unnecessary temperature gradient or stress field distribution. Thus, the properties of the integrated pressure or temperature sensor are not influenced. The method has such advantages as simple apparatus, easy local temperature control, and high bonding efficiency.