Low energy ion implanter based on great area DC pulse plasma

The present invention relates to material surface engineering, and is especially one low energy ion implanter based on great area DC pulse plasma. The ion implanter includes one metal vacuum chamber, one low energy ion implanting power source and one vacuum system, and features that one meshed metal...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEI MINGKAI, YUAN LIJIANG, ZHANG ZHONGLIN, GUO JIA, GAO FENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention relates to material surface engineering, and is especially one low energy ion implanter based on great area DC pulse plasma. The ion implanter includes one metal vacuum chamber, one low energy ion implanting power source and one vacuum system, and features that one meshed metal sleeve set inside the vacuum chamber is applied with negative DC pulse bias with the a plasma power source the form plasma between the furnace inner wall and the meshed metal sleeve, and that the DC pulse plasma source and the low energy ion implanting device are combined inside the vacuum chamberand negative DC pulse bias is applied alternately on the meshed metal sleeve and the sample stage so as to generate plasma and implant low energy ion alternately. The present invention has the advantages of low cost and capacity of realizing great area ion implantation.