A damascene copper wiring image sensor

A CMOS image sensor array (100) and method of fabrication wherein the sensor includes Copper (Cu) metallization levels (M1, M2) allowing for incorporation of a thinner interlevel dielectric stack (13 Oa-c) with improved thickness uniformity to result in a pixel array exhibiting increased light sensi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ADKISSON JAMES W.,GAMBINO JEFFREY P.,JAFFE MARK D.,LEIDY ROBERT K.,STAMPER ANTHONY K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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