Semiconductor laser element

To provide a semiconductor laser element having a structure capable of suppressing generation of a kink even in a case where an FFPx is made large, the semiconductor laser element has a ridge structure in which an active layer is provided between a semiconductor layer of one conductivity type and a...

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Bibliographische Detailangaben
1. Verfasser: TAKASE TADASHI
Format: Patent
Sprache:eng
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