Semiconductor laser element

To provide a semiconductor laser element having a structure capable of suppressing generation of a kink even in a case where an FFPx is made large, the semiconductor laser element has a ridge structure in which an active layer is provided between a semiconductor layer of one conductivity type and a semiconductor layer of the other conductivity type having a ridge, and window regions that are non-gain regions are provided at both ends thereof, wherein a difference in equivalent refractive index between the ridge and portions on both sides thereof in each of the window regions is larger than a difference in equivalent refractive index between the ridge and portions on both sides thereof in a gain region.