Phase change random access memory and methods of fabricating the same

Phase change random access memory and methods of fabricating the same

A storage node, a phase change random access memory having an improved structure to improve adhesion of a phase change material layer and methods of fabricating the same are provided. The storage node may include a bottom electrode, a top electrode, a phase change material layer inserted between the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NOH JIN-SEO,KIM KI-JOON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A storage node, a phase change random access memory having an improved structure to improve adhesion of a phase change material layer and methods of fabricating the same are provided. The storage node may include a bottom electrode, a top electrode, a phase change material layer inserted between the bottom electrode and the top electrode, and an adhesion interfacial layer inserted between the bottom electrode and the phase change material layer. The phase change random access memory may include a switching device and the storage node connected to the switching device.