Diode design to reduce the effects of radiation damage

Diode design to reduce the effects of radiation damage

A photodetector (16) for X-ray applications includes a photodiode (34, 64) at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer (36) may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact la...

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Bibliographische Detailangaben
1. Verfasser: ZELAKIEWICZ SCOTT STEPHEN,BOGDANOVICH SNEZANA,COUTURE AARON JUDY,ALBAGLI DOUGLAS,HENNESSY WILLIAM ANDREW
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A photodetector (16) for X-ray applications includes a photodiode (34, 64) at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer (36) may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer (38), or at a different potential. A passivation or dielectric layer (56) separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.