Semiconductor device and method of manufacturing such a semiconductor device

Semiconductor device and method of manufacturing such a semiconductor device

The invention relates to a CMOS device (10) with an NMOST 1 and PMOST 2 having gate regions (1D,2D) comprising respectively first and second conducting materials of a compound containing both a metal and a further element. According to the invention the first and second conducting material both comp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: HOOKER JACOB C.,LANDER ROBERT,WOLTERS ROBERTUS A.M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention relates to a CMOS device (10) with an NMOST 1 and PMOST 2 having gate regions (1D,2D) comprising respectively first and second conducting materials of a compound containing both a metal and a further element. According to the invention the first and second conducting material both comprise a compound containing as the metal a metal selected from the group comprising molybdenum and tungsten and the first conducting material comprises oxygen as the further element and the second conducting material comprise a chalcogenide as the further element. The invention also provides an attractive method of manufacturing such a device.