Systems and methods for nanowire growth and harvesting
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention...
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creator | PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE |
description | The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101010780A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101010780A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101010780A3</originalsourceid><addsrcrecordid>eNrjZDALriwuSc0tVkjMS1HITS3JyE8pVkjLL1LIS8zLL88sSlVIL8ovL8kAy2ckFpWlFpdk5qXzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DAxA0tzBwNCZGDQC2Qy2z</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Systems and methods for nanowire growth and harvesting</title><source>esp@cenet</source><creator>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</creator><creatorcontrib>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</creatorcontrib><description>The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; INORGANIC CHEMISTRY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; NANOTECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070801&DB=EPODOC&CC=CN&NR=101010780A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76304</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070801&DB=EPODOC&CC=CN&NR=101010780A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</creatorcontrib><title>Systems and methods for nanowire growth and harvesting</title><description>The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>INORGANIC CHEMISTRY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>NANOTECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALriwuSc0tVkjMS1HITS3JyE8pVkjLL1LIS8zLL88sSlVIL8ovL8kAy2ckFpWlFpdk5qXzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DAxA0tzBwNCZGDQC2Qy2z</recordid><startdate>20070801</startdate><enddate>20070801</enddate><creator>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</creator><scope>EVB</scope></search><sort><creationdate>20070801</creationdate><title>Systems and methods for nanowire growth and harvesting</title><author>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101010780A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>INORGANIC CHEMISTRY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>NANOTECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAN YAOLING,DUAN XIANGFENG,DUBROW BOB,GOLDMAN JAY,MOSTARSHED SHAHRIAR,NIU CHUNMING,ROMANO LINDA T.,STUMBO DAVE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Systems and methods for nanowire growth and harvesting</title><date>2007-08-01</date><risdate>2007</risdate><abstract>The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Systems and methods for nanowire growth and harvesting |
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