Semiconductor pressure resistance type sensor and its operation method

Being connected to a circuit electrically, the piezoresistance sensor of semiconductor includes basis material of semiconductor, at least a piezoresistance module, and a conducting material layer. Basis material of semiconductor includes a suspensory membrane, and a basis material. Basis material is...

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Bibliographische Detailangaben
1. Verfasser:	XIESHEN,ZHANG XIE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	Being connected to a circuit electrically, the piezoresistance sensor of semiconductor includes basis material of semiconductor, at least a piezoresistance module, and a conducting material layer. Basis material of semiconductor includes a suspensory membrane, and a basis material. Basis material is nearly setup to circumference of the suspensory membrane. Being setup inside the suspensory membrane, the piezoresistance module is connected to circuit electrically. Conductive material layer is connected to the suspensory membrane electrically.