Acceptor activation method for nitrogen adulterated ZnO

The invention provides an activation method for a nitrogen-doped ZnO acceptor, belonging to the semiconductor material field and particularly taking the radio frequency plasma metal-organic chemical vapor deposition (MOCVD) technique as the late-annealing technique of the nitrogen-doped ZnO. The invention aims to overcome the defect that the nitrogen-doped p type ZnO is hard to acquire and provides a method that by utilizing the radio frequency plasma annealing technique, the nitrogen-doped ZnO undergoes the high temperature annealing in the nitrogen oxide plasma, thereby obtaining the highlyefficient and stable p type ZnO doping; because nitrogen and oxygen which are high in activity are formed in the atmosphere, the escape of the nitrogen in the nitrogen-doped ZnO can be prevented, andsimultaneously the desorption of the oxygen in the ZnO can also be prevented, and simultaneously the nitrogen acceptor in the nitrogen-doped ZnO is activated, thereby realizing the preparation of thep type ZnO and further real