Method for electrodepositing a metal, especially copper, use of said method and integrated circuit

Method for electrodepositing a metal, especially copper, use of said method and integrated circuit

The invention relates inter alia to a method wherein a contact hole for a conductor (14) is produced in an insulating layer (16). A barrier layer (20) is then applied, followed by a photo-lacquer layer (30) which is applied, irradiated and developed. A galvanic method is subsequently used to produce...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LINDNER CHRISTINE, KERKEL KLAUS, BRADL STEPHAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates inter alia to a method wherein a contact hole for a conductor (14) is produced in an insulating layer (16). A barrier layer (20) is then applied, followed by a photo-lacquer layer (30) which is applied, irradiated and developed. A galvanic method is subsequently used to produce a copper contact (32) in the contact hole (18). The barrier layer (20) or an additional boundary electrode layer (22) is used as a boundary electrode in the galvanic process. Said method enables critical metal contaminations to be kept to a minimum during manufacturing.