Spin transistor and manufacturing method thereof

The invention discloses a spin transistor and manufacturing method, it using lithography process for the regional definition on the substrate, and then using ion implantation method to form doped area, and on the substrate, forming magnetoresistance films, and eventually, producing the spin transist...

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Bibliographische Detailangaben
Hauptverfasser: HUANG DERUI, HUANG YINGWEN, YAO YONGDE, ZHU CHAOJU, LU ZHIQUAN, XIE LANQING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a spin transistor and manufacturing method, it using lithography process for the regional definition on the substrate, and then using ion implantation method to form doped area, and on the substrate, forming magnetoresistance films, and eventually, producing the spin transistor with the emitter, collector and base all in the same plane. This manufacturing method integrates emitter, base and collector into a single plane, so realizes the tiny objective of the spin transistors, and it is favorable of the integration and follow-up package of the spin transistors and the integrated circuits components.