Replacement method of non-volatilization internal memory

The invention relates to a reset method of a non-volatile memory, the non-volatile memory comprises a plurality of memory cells which are arranged on a first conductive base, wherein each memory cell comprises a partial base, a control gate, a charge storage layer and two second conductive source and drain areas, the charge storage layer is arranged between the partial base and the control gate, and the two second conductive source and drain areas are arranged in the partial base. The reset method uses bilateral bias and band tunneling thermoelectric tunnel effect, and comprises that a first voltage is applied to the base, a second voltage is applied to each source and drain area, and the difference between the first voltage and the second voltage fully produces a band tunneling thermoelectric tunnel. The method also comprises a gate voltage which is applied to each control gate to control the control gate and the applied time of the voltage, and a turn on voltage of each memory cell is converged in a permiss