Semiconductor device

The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAI TAKESHI, KANAMARU YASUHIRO, MANABE YUKIKO, OKUYAMA KOUSUKE, KAWASHIMA YOSHIYUKI, ITO FUMITOSHI, ISHII YASUSHI, HASHIMOTO TAKASHI, MIZUNO MAKOTO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.