Flash memory element

A flash memory device comprises a first group of dummy memory cells disposed between source selection transistors, which are coupled to a source selection line, and memory cells coupled to a first wordline. The flash memory device further comprises a second group of dummy memory cells disposed betwe...

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Hauptverfasser:	BOKU HEISHU, LEE KYEONG BOCK, PARK HEE SIK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	BOKU HEISHU LEE KYEONG BOCK PARK HEE SIK
description	A flash memory device comprises a first group of dummy memory cells disposed between source selection transistors, which are coupled to a source selection line, and memory cells coupled to a first wordline. The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. The flash memory device is configured to prevent program disturbance in deselected cell strings and degradation of programming/erasing speeds in a selected cell string.
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The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. 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The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. The flash memory device is configured to prevent program disturbance in deselected cell strings and degradation of programming/erasing speeds in a selected cell string.</abstract><oa>free_for_read</oa></addata></record>
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subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	Flash memory element
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