Transistor with magneto resistnace
Structure of the transistor with magneto resistance is as following: subassembly of magneto resistance is as emitter; passive block is as collector; base electrode is connected between the emitter and the collector; the emitter is conducted to the collector electrically. Under control of external ma...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Structure of the transistor with magneto resistance is as following: subassembly of magneto resistance is as emitter; passive block is as collector; base electrode is connected between the emitter and the collector; the emitter is conducted to the collector electrically. Under control of external magnetic field, magnetic multilayer film in subassembly of magneto resistnace can generate two magnetic directions: parallel state and antiparallel state. Further, under fixed voltage, different magnitudes of input current of emitter are generated. Output current of base is changed as change of input current of emitter so as to be able to generate quite large rate of change of base electrode current. |
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