Large-area and low-power laser stripping method for GaN-base epitaxial layer

A method for stripping large-area GaN-based epitaxial layer by low-power laser features that the pulse laser beam is used to scan the GaN-loased epitaxial film grown on the sapphire substrate from outside to inside while the sapphire substrate is heated and the laser threshold is biased.

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Bibliographische Detailangaben
Hauptverfasser:	KNAG XIANGNING, YANG ZHIJIAN, HU XIAODONG, QIN ZHIXING, ZHANG PEI, CHEN ZHIZHONG, ZHANG GUOYI, CHEN HAOMING, YU TONGJUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A method for stripping large-area GaN-based epitaxial layer by low-power laser features that the pulse laser beam is used to scan the GaN-loased epitaxial film grown on the sapphire substrate from outside to inside while the sapphire substrate is heated and the laser threshold is biased.