Metal oxide semiconductor transistor and production thereof

The invention is concerned with the metal oxide semiconductor transistor manufacture method, it is: forms the grid structure on the base, then forms the excursive clearance wall on the sidewall of the grid structure; processes the first ion injecting craftwork in order to form the LDD in the base of the grid structure side-edge, forms another clearance wall at the sidewall of the excursive clearance wall; processes the second ion injecting craftwork in order to form the source pole and the leaking pole in the base of the clearance wall side-edge, forms a siliconized layer at the surface of the source pole and the leaking pole; forms a oxidation layer on the siliconized layer, then removes the clearance wall; forms a etching stopping layer on the base. There is the oxidation layer on the surface of the siliconized layer, therefore cannot get the damage by the solvent when removing the clearance wall.