Gap wall removing method and method for manufacturing MOS transistor

The invention is a method for removing gap walls, applied after formation of a metal oxide semiconductor (MOS) transistor that comprises grid on a substrate, gas walls on side walls of the grid and source and drain regions in the substrate on sides of the gas walls. And the method makes wet etching...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI ZHONGRU, WU ZHINING, LIAO KUANYANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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