Gap wall removing method and method for manufacturing MOS transistor

Gap wall removing method and method for manufacturing MOS transistor

The invention is a method for removing gap walls, applied after formation of a metal oxide semiconductor (MOS) transistor that comprises grid on a substrate, gas walls on side walls of the grid and source and drain regions in the substrate on sides of the gas walls. And the method makes wet etching...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LI ZHONGRU, WU ZHINING, LIAO KUANYANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention is a method for removing gap walls, applied after formation of a metal oxide semiconductor (MOS) transistor that comprises grid on a substrate, gas walls on side walls of the grid and source and drain regions in the substrate on sides of the gas walls. And the method makes wet etching process on aphotic condition so as to be able to avoid damaging the source and drain regions as removing the gas walls. And the invention also relates to a method for manufacturing the MOS transistor.