Technique for growing Cd-Zn-Te crystal

The invention relates to a crystal growth for Te-Zn-cadmium crystal ingot. The process includes the following steps: according to the selected superiority crystal seeding direction to make seed crystal block or stick in certain specification, adding the seed crystal into silica tube bottom cavity, a...

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Bibliographische Detailangaben
Hauptverfasser:	WAN RUIMIN, JI RONGBIN, YUE QUANLING, JI RUISONG, WANG XIAOWEI, HUANG HUI, ZHAO ZENGLIN, ZHANG PENGJU, ZHANG XIAOWEN, SONG BINGWEN, HU ZANDONG, WU GANG, CAO CHUNJIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a crystal growth for Te-Zn-cadmium crystal ingot. The process includes the following steps: according to the selected superiority crystal seeding direction to make seed crystal block or stick in certain specification, adding the seed crystal into silica tube bottom cavity, and the upper adding to Te-Zn-cadmium alloy crystal ingot to grow Te-Zn-cadmium crystal ingot. The invention would improve crystallizing rate from 40% to 65%, and yield from 10% to 20%, and effectively decrease producing cost.