Method for manufacturing metal silicified layer

Method for manufacturing metal silicified layer

The invention is a method for manufacturing metallic silicide layer, forming at least a grid on a substrate, then forming a hard mask on the grid surface and exposing the substrate surface, then forming a first metallic silicide layer on the exposed substrate surface, where the first metallic silici...

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Hauptverfasser: HONG ZONGYOU, JIANG YIYING, CHEN YIWEI, XIE CHAOJING, ZHANG YULAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HONG ZONGYOU
JIANG YIYING
CHEN YIWEI
XIE CHAOJING
ZHANG YULAN
description The invention is a method for manufacturing metallic silicide layer, forming at least a grid on a substrate, then forming a hard mask on the grid surface and exposing the substrate surface, then forming a first metallic silicide layer on the exposed substrate surface, where the first metallic silicide layer is made of one of the cobalt silicide and Ti silicide, successively removing the hard mask and forming a second metallic silicide layer on the grid surface, where the second metallic silicide layer is selected from one of the nickel silicide, Pt silicide, Pd silicide and nickel alloy. The invention can improve the problem of small line width and high resistance and solve the problems of peak phenomenon and surging in the source and drain regions caused by nickel silicide.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing metal silicified layer
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