Method for manufacturing metal silicified layer

The invention is a method for manufacturing metallic silicide layer, forming at least a grid on a substrate, then forming a hard mask on the grid surface and exposing the substrate surface, then forming a first metallic silicide layer on the exposed substrate surface, where the first metallic silicide layer is made of one of the cobalt silicide and Ti silicide, successively removing the hard mask and forming a second metallic silicide layer on the grid surface, where the second metallic silicide layer is selected from one of the nickel silicide, Pt silicide, Pd silicide and nickel alloy. The invention can improve the problem of small line width and high resistance and solve the problems of peak phenomenon and surging in the source and drain regions caused by nickel silicide.