Wafer washing method and grid structure manufacturing method
The method is applicable after gate structure is defined. The gate structure includes gate dielectric layer, barrier layer of containing nitrogen, and gate electrode layer of containing silicon. Cleaning method carries out cleaning for substrate by using solution of phosphoric acid and solution of h...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The method is applicable after gate structure is defined. The gate structure includes gate dielectric layer, barrier layer of containing nitrogen, and gate electrode layer of containing silicon. Cleaning method carries out cleaning for substrate by using solution of phosphoric acid and solution of hydrofluoric acid. The cleaning method can remove residue of silicon nitride generated by barrier layer of containing nitrogen and gate electrode layer of containing silicon, and reduces adherence of contaminant and small particles so as to raise rate of finished products and quality and reliability of components. |
|---|